Structural micro-disturbance doping: A novel approach to synthesize semiconductor single-walled carbon nanotubes

Synthesis of semiconducting SWNTs or converting metallic SWNTs into semiconducting SWNTs could help materialize the large scale fabrication of semiconducting SWNTs based nanodevices. Prof. Y. F. Zhang’s group at Shanghai Jiaotong University1 claimed a novel approach for synthesizing semiconducting SWNTs by sulfur (S) doping with the method of graphite arc discharge.
The semiconducting SWNTs features sulfur doping into carbon nanotubes from experimental data. The researchers also used the first-principles calculations to investigate the sulfur substitutional doping into SWNTs. The results showed that sulfur atoms in SWNTs can open the band gaps at Fermi level (see image). Metallic SWNTs can be converted into semiconducting SWNTs. The researchers have fabricated SWNT-FET with S-doped SWNTs and the experimental data and theoretical calculations indicate that the electric properties of S-doped SWNTs are typical semiconducting. Typical FET device performance was shown from S-doped SWNTs FETs. S-doping method has opened a new route for mass production of semiconducting SWNTs.

The authors of this work are from:
National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiaotong University, Shanghai, China.

Original article citation
Z. J. Li, L. Wang, Y. J. Su, P. Liu and Y. F. Zhang, “Semiconducting single-walled carbon nanotubes synthesized by S-doping”, Nano-Micro Lett. 1, 9-13 (2009).
http://www.nmletters.org

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