Large-scale Patterning of Hydrophobic Silicon Nanostructure Arrays Fabricated by Dual Lithography and Deep Reactive Ion Etching

Large-scale Patterning of Hydrophobic Silicon Nanostructure Arrays Fabricated by Dual Lithography and Deep Reactive Ion Etching

 

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Ma et al. recently developed a simple and effective method to fabricate hydrophobic silicon nanostructure arrays of high-aspect-ratio (higher than 15) by the dual lithography and Deep Reactive Ion Etching (DRIE).

It has been proven that several parameters (RF power, pressure, gas mixture) influence the sidewall profile of nanostructures. Several parameters had been modified based on plenty of experiments. The etching time was decreased from 7 to 10s, while the other parameters are fixed. The sidewall profile roughness has been improved by adjusting the parameters of DRIE process. The roughness of sidewall profiles was decreased from tens of nanometers to several nanometers.

Finally they fabricated Nano/nano dual-scale hierarchical structures by coupling the dual lithography, DRIE and black silicon. The contact angle (CA) of a water droplet atop the surface is larger than 150° and quite consistent. The contact angles hysteresis (CAH) of them are basically less than 4°. This process opens new application possibilities in optical, photoelectric, microelectronic, catalytic, and biomedical applications.

Original article citation

Zhibo Ma, Chengyu Jiang, Weizheng Yuan, “Large-scale Patterning of Hydrophobic Silicon Nanostructure Arrays Fabricated by Dual Lithography and Deep Reactive Ion Etching”, Nano-Micro Lett. 5(1), 7-12 (2013) / http://dx.doi.org/10.3786/nml.v5i1.p7-12

A Highlight from Hai-Ting Xie for NMSTR.

 

 

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