A Promising Method for Engineering the Number of Graphene Layers by Oxygen Plasma Etching

A Promising Method for Engineering the Number of Graphene Layers by Oxygen Plasma Etching

09Haider et al. have recently studied a singular sheet etching process using oxygen plasma to engineer the number of graphene layers, which could be a potential technique for producing large size graphenes with high yield from multilayer graphite materials. They found that they could produce monolayer graphene films from bilayer graphenes with the optimum process parameters. By analyzing the possible etching mechanism and experimental results, they concluded that the oxygen plasma etching of graphene was an anisotropically vertical etching process. With the comparison with oxygen reactive ion etching, the oxygen plasma etching introduced fewer defects onto the bottom graphene layer. The induced defects could be obviously suppressed by an annealing process after oxygen plasma etching. Moreover, this process provides the possibility of producing large size graphene thin films directly from multilayer graphene or even graphite flakes.

Original article citation

Citation: Haider Al-Mumen, Fubo Rao, Wen Li and Lixin Dong, “Singular Sheet Etching of Graphene with Oxygen Plasma”, Nano-Micro Lett. 6(2), 116-124 (2014). http://dx.doi.org/10.5101/nml.v6i2.p116-124

A Highlight from Tao Wang for NMSTR.

Tags: Graphene; Plasma; Singular sheet etching

 

 

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