A New Structure of Resistive Switching Memory in a Smaller Size

A New Structure of Resistive Switching Memory in a Smaller Size

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Debanjan Jana et al. developed a new Cr/CrOx/TiOx/TiN structure of resistive switching memory whose size is 0.4×0.4 μm2 for the first time.

The device was fabricated by thermally grown, radio frequency sputtering, etching and lift-off process. By measuring 100 random samples, they found that the device in a smaller size has lower leakage current and better resistive switching characteristics. It is confirmed that a device in the size of 0.4×0.4 μm2 with the amorphous TiOx and polycrystalline CrOx layer was observed by TEM image and EDX spectrum.

They had demonstrated that the device clarified by Weibull distribution has good device-to-device uniformity with a yield of 85% owing to higher slope/shape factor. The resistive switching is due to the formation/rupture of oxygen vacancy filament in the TiOx switching layer and the CrOx layer acts as a vacancy supply layer. Therefore, data retention of 6 h, long read pulse endurance of 105 cycles and program/erase endurance of 500 cycles were obtained.

As a new RRAM device produced by a simple fabrication process, it has good resistive switching memory characteristics, which will be promising for next-generation nanoscale non-volatile memory application.

Original article citation

Debanjan Jana, Subhranu Samanta, Sourav Roy, Yu Feng Lin and Siddheswar Maikap, “Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrOx/TiOx/TiN Structure”, Nano-Micro Lett. 7(4), 392-399 (2015). doi:10.1007/s40820-015-0055-3

A Highlight from Tian Gao for NMSTR.

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